Huixia FU, Associate Professor
Research Interests
First-principles calculations, Density functional theory
Topological states and topological materials, Quantum materials
Two-dimensional materials
Education & Employment
Sep.2020-Present Associate Professor, Chongqing University, China
Jul.2017- Aug.2020 Postdoc, Weizmann Institute of Science, Israel
Sep.2012- Jul.2017 Ph.D., Institute of Physics, Chinese Academy of Sciences, China
Sep.2008 - Jul.2012 B.S., Department of Physics, Lanzhou University, China
Selected Publications
H. X. Fu, C.-X. Liu, B. Yan. Exchange Bias and Quantum Anomalous Hall Effect in the MnBi2Te4-CrI3 Heterostructure. Sci. Adv. 6(10), eaaz0948, 2020.
S. Xu#, H. X. Fu#, Y. Tian, T. Deng, J. Cai, J. Wu, T. Tu, T. Li, C. Tan, Y. Liang, C. Zhang, Z. Liu, Z. Liu, Y. Chen, Y. Jiang, B. Yan, H. Peng. Exploiting Two-Dimensional Bi2O2Se for Trace Oxygen Detection. Angew. Chem. Int. Ed. 10.1002/anie.202006745, 2020.
C. Guo#, X. Meng#, H. X. Fu#, Q. Wang#, H. Wang, Y. Tian, J. Peng, R. Ma, Y. Weng, S. Meng, E. Wang, Y. Jiang. Probing nonequilibrium dynamics of photoexcited polarons on a metal-oxide surface with atomic precision. Phys. Rev. Lett. 124, 206801, 2020 (Editors' Suggestion).
H. X. Fu, J. Wu, H. Peng, and B. Yan. Self-modulation doping effect in the high-mobility layered semiconductor Bi2O2Se. Phys. Rev. B 97, 241203, 2018 (Rapid Communication).
Y. Yu#, H. X. Fu#, L. She, S. Lu, Q. Guo, H. Li, S. Meng, G. Cao. Fe on Sb(111): Potential Two-Dimensional Ferromagnetic Superstructures. ACS nano 11, 2143, 2017.
H. X. Fu, Z. Liu, C. Lian, J. Zhang, H. Li, J.-T. Sun, S. Meng. Magnetic Dirac Fermions and Chern Insulator Supported on Pristine Silicon Surface. Phys. Rev. B 94, 035427, 2016.
H. X. Fu, J. Ren, L. Chen, C. Si, J. Qiu, W. Li, J. Zhang, H. Li, K. Wu, W. Duan, S. Meng. Prediction of Silicon-based Room Temperature Quantum Spin Hall Insulator via Orbital Mixing. Europhys. Lett. 113, 67003, 2016.
H. X. Fu, L. Chen, J. Chen, J. Qiu, Z. Ding, J. Zhang, K.Wu, H. Li, S. Meng. Multilayered Silicene: The Bottom-Up Approach for a Weakly Relaxed Si(111) with Dirac Surface States. Nanoscale 7, 15880, 2015.
H. X. Fu, J. Zhang, Z. Ding, H. Li, and S. Meng. Stacking-dependent electronic structure of bilayer silicene. Appl. Phys. Lett. 104, 131904, 2014.
Full publication list can be found in the following Webpage: https://scholar.google.com/citations?user=TUAAzuwAAAAJ&hl=zh-CN
Contact
E-mail: hxfu@cqu.edu.cn
Address: Room LF202, Science Building, Huxi Campus, Chongqing University, P. R. China, 401331
